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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M003A090PH
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4926270GP1M003A090PH ImageGlobal Power Technologies Group

GP1M003A090PH

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Specifications
  • Part Number
    GP1M003A090PH
  • Manufacturer/Brand
    SemiQ
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 900V 2.5A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GP1M003A090PH.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    5.1 Ohm @ 1.25A, 10V
  • Power Dissipation (Max)
    94W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    1560-1158-1
    1560-1158-1-ND
    1560-1158-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    748pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    900V
  • Detailed Description
    N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    2.5A (Tc)

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