70T659S12DR

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Specifications

Part Number

70T659S12DR
Manufacturer/Brand

IDT (Renesas Electronics Corporation)
Stock Quantity

In stock
Description

IC SRAM 4.5M PARALLEL 208PQFP
Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant
Datasheets

70T659S12DR.pdf
ECAD Model
Write Cycle Time - Word, Page

12ns
Voltage - Supply

2.4 V ~ 2.6 V
Technology

SRAM - Dual Port, Asynchronous
Supplier Device Package

208-PQFP (28x28)
Series

-
Packaging

Tray
Package / Case

208-BFQFP
Other Names

IDT70T659S12DR
IDT70T659S12DR-ND
Operating Temperature

0°C ~ 70°C (TA)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

3 (168 Hours)
Memory Type

Volatile
Memory Size

4.5Mb (128K x 36)
Memory Interface

Parallel
Memory Format

SRAM
Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant
Detailed Description

SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 12ns 208-PQFP (28x28)
Base Part Number

IDT70T659
Access Time

12ns

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Shipping
Payment

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The following is "70T659S12DR" related products.

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Description: IC SRAM 4.5M PARALLEL 208CABGA

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In stock

70T659S12DR

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