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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFK26N120P
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2812960IXFK26N120P ImageIXYS Corporation

IXFK26N120P

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Reference Price(In US Dollars)

In stock
1+
$30.36
25+
$25.806
100+
$23.984
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Specifications
  • Part Number
    IXFK26N120P
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1200V 26A TO-264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    6.5V @ 1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-264AA (IXFK)
  • Series
    HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs
    460 mOhm @ 13A, 10V
  • Power Dissipation (Max)
    960W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-264-3, TO-264AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    16000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    225nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)
  • Current - Continuous Drain (Id) @ 25°C
    26A (Tc)
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