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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFN210N20P
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2620207IXFN210N20P ImageIXYS Corporation

IXFN210N20P

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Reference Price(In US Dollars)

In stock
1+
$34.80
10+
$32.19
30+
$29.58
100+
$27.492
250+
$25.23
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Specifications
  • Part Number
    IXFN210N20P
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 188A SOT-227B
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4.5V @ 8mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-227B
  • Series
    HiPerFET™
  • Rds On (Max) @ Id, Vgs
    10.5 mOhm @ 105A, 10V
  • Power Dissipation (Max)
    1070W (Tc)
  • Packaging
    Tube
  • Package / Case
    SOT-227-4, miniBLOC
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    18600pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    255nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B
  • Current - Continuous Drain (Id) @ 25°C
    188A (Tc)
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