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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFN50N120SK
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3763726IXFN50N120SK ImageIXYS Corporation

IXFN50N120SK

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Reference Price(In US Dollars)

In stock
10+
$68.614
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Specifications
  • Part Number
    IXFN50N120SK
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH
  • Lead Free Status / RoHS Status
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.8V @ 10mA
  • Vgs (Max)
    +20V, -5V
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package
    SOT-227B
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    52 mOhm @ 40A, 20V
  • Power Dissipation (Max)
    -
  • Package / Case
    SOT-227-4, miniBLOC
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Chassis Mount
  • Manufacturer Standard Lead Time
    24 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    1895pF @ 1000V
  • Gate Charge (Qg) (Max) @ Vgs
    115nC @ 20V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    N-Channel 1200V 48A (Tc) Chassis Mount SOT-227B
  • Current - Continuous Drain (Id) @ 25°C
    48A (Tc)
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Description: MOSFET N-CH 800V 53A SOT-227B

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Description: MOSFET N-CH

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Description: MOSFET N-CH 500V 48A SOT-227B

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