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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGJ40N60C2D1
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4973965IXGJ40N60C2D1 ImageIXYS Corporation

IXGJ40N60C2D1

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Specifications
  • Part Number
    IXGJ40N60C2D1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 75A 300W TO268
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 30A
  • Test Condition
    400V, 30A, 3 Ohm, 15V
  • Td (on/off) @ 25°C
    18ns/90ns
  • Switching Energy
    200µJ (off)
  • Supplier Device Package
    TO-268
  • Series
    HiPerFAST™
  • Reverse Recovery Time (trr)
    25ns
  • Power - Max
    300W
  • Packaging
    Tube
  • Package / Case
    TO-220-3, Short Tab
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    PT
  • Gate Charge
    95nC
  • Detailed Description
    IGBT PT 600V 75A 300W Through Hole TO-268
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    75A
  • Base Part Number
    IXG*40N60
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