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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFK55N50F
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3273625IXFK55N50F ImageIXYS RF

IXFK55N50F

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Reference Price(In US Dollars)

In stock
1+
$29.92
25+
$25.434
100+
$23.639
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Specifications
  • Part Number
    IXFK55N50F
  • Manufacturer/Brand
    IXYS RF
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 55A TO264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXFK55N50F.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5.5V @ 8mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-264 (IXFK)
  • Series
    HiPerRF™
  • Rds On (Max) @ Id, Vgs
    85 mOhm @ 27.5A, 10V
  • Power Dissipation (Max)
    560W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-264-3, TO-264AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    195nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 55A (Tc) 560W (Tc) Through Hole TO-264 (IXFK)
  • Current - Continuous Drain (Id) @ 25°C
    55A (Tc)

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