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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB020N10N5LFATMA1
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4540207IPB020N10N5LFATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB020N10N5LFATMA1

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Reference Price(In US Dollars)

In stock
1+
$9.35
10+
$8.415
100+
$6.919
500+
$5.797
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Specifications
  • Part Number
    IPB020N10N5LFATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V D2PAK-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB020N10N5LFATMA1.pdf
  • Vgs(th) (Max) @ Id
    4.1V @ 270µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO263-3
  • Series
    OptiMOS™-5
  • Rds On (Max) @ Id, Vgs
    2 mOhm @ 100A, 10V
  • Power Dissipation (Max)
    313W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB020N10N5LFATMA1DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    840pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    195nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

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