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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB110N20N3LFATMA1
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3055112IPB110N20N3LFATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB110N20N3LFATMA1

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Reference Price(In US Dollars)

In stock
1000+
$4.546
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Specifications
  • Part Number
    IPB110N20N3LFATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200 D2PAK-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB110N20N3LFATMA1.pdf
  • Vgs(th) (Max) @ Id
    4.2V @ 260µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO263-3
  • Series
    OptiMOS™ 3
  • Rds On (Max) @ Id, Vgs
    11 mOhm @ 88A, 10V
  • Power Dissipation (Max)
    250W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB110N20N3LFATMA1-ND
    IPB110N20N3LFATMA1TR
    SP001503864
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    76nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3
  • Current - Continuous Drain (Id) @ 25°C
    88A (Tc)

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