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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB120N03S4L03ATMA1
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394903IPB120N03S4L03ATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB120N03S4L03ATMA1

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Reference Price(In US Dollars)

In stock
1000+
$0.812
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Specifications
  • Part Number
    IPB120N03S4L03ATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH TO263-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB120N03S4L03ATMA1.pdf
  • Vgs(th) (Max) @ Id
    2.2V @ 40µA
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    Automotive, AEC-Q101, OptiMOS™
  • Rds On (Max) @ Id, Vgs
    3 mOhm @ 100A, 10V
  • Power Dissipation (Max)
    79W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    SP000936514
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5300pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 120A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

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