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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPU78CN10N G
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6972238IPU78CN10N G ImageInternational Rectifier (Infineon Technologies)

IPU78CN10N G

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Specifications
  • Part Number
    IPU78CN10N G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 13A TO251-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 12µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO251-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    78 mOhm @ 13A, 10V
  • Power Dissipation (Max)
    31W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    IPU78CN10N G-ND
    IPU78CN10NG
    SP000209098
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    716pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 13A (Tc) 31W (Tc) Through Hole PG-TO251-3
  • Current - Continuous Drain (Id) @ 25°C
    13A (Tc)
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Description: MOSFET N-CH 600V 7.3A TO-251

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Description: MOSFET N-CH 600V 2.4A TO-251

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Description: CONSUMER

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Description: MOSFET N-CH 800V 5.7A TO251

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Description: MOSFET N-CH 800V 2.5A TO251-3

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Description: MOSFET N-CH 600V TO-251-3

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Description: MOSFET N-CH 800V 1.9A TO251-3

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Description: MOSFET N-CH 800V TO251-3

Manufacturers: International Rectifier (Infineon Technologies)
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Description: MOSFET N-CH 600V 4.4A TO-251

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