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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPU80R1K4CEBKMA1
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6919491IPU80R1K4CEBKMA1 ImageInternational Rectifier (Infineon Technologies)

IPU80R1K4CEBKMA1

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Reference Price(In US Dollars)

In stock
1+
$0.87
10+
$0.782
100+
$0.61
500+
$0.504
1000+
$0.398
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Specifications
  • Part Number
    IPU80R1K4CEBKMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 3.9A TO251-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.9V @ 240µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO251-3
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    1.4 Ohm @ 2.3A, 10V
  • Power Dissipation (Max)
    63W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    SP001100620
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 3.9A (Tc) 63W (Tc) Through Hole PG-TO251-3
  • Current - Continuous Drain (Id) @ 25°C
    3.9A (Tc)
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Description: MOSFET N-CH 800V 4.5A TO251-3

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