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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPU80R3K3P7AKMA1
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3394756IPU80R3K3P7AKMA1 ImageInternational Rectifier (Infineon Technologies)

IPU80R3K3P7AKMA1

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Reference Price(In US Dollars)

In stock
1+
$0.94
10+
$0.82
100+
$0.633
500+
$0.469
1000+
$0.375
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Specifications
  • Part Number
    IPU80R3K3P7AKMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 1.9A TO251-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 30µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO251-3
  • Series
    CoolMOS™ P7
  • Rds On (Max) @ Id, Vgs
    3.3 Ohm @ 590mA, 10V
  • Power Dissipation (Max)
    18W (Tc)
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    SP001636448
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    120pF @ 500V
  • Gate Charge (Qg) (Max) @ Vgs
    5.8nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3
  • Current - Continuous Drain (Id) @ 25°C
    1.9A (Tc)
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Description: MOSFET N-CH 800V 5.7A TO251

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Description: MOSFET N-CH 800V 1.5A IPAK

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Description: MOSFET N-CH 800V TO251-3

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Description: MOSFET N-CH 800V 1.9A TO251-3

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Description: MOSFET N-CH 950V 4A TO251

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Description: MOSFET N-CH 950V 2A TO251

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