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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6100
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IRF6100

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Specifications
  • Part Number
    IRF6100
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 5.1A FLIP-FET
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    IRF6100.pdf
  • Vgs(th) (Max) @ Id
    1.2V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-FlipFet™
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    65 mOhm @ 5.1A, 4.5V
  • Power Dissipation (Max)
    2.2W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    4-FlipFet™
  • Other Names
    *IRF6100
    IRF6100CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1230pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 5.1A (Ta) 2.2W (Ta) Surface Mount 4-FlipFet™
  • Current - Continuous Drain (Id) @ 25°C
    5.1A (Ta)

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