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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF610L
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2608489IRF610L ImageElectro-Films (EFI) / Vishay

IRF610L

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Specifications
  • Part Number
    IRF610L
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 3.3A TO-262
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    IRF610L.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-262
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.5 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    3W (Ta), 36W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    *IRF610L
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    8.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Through Hole TO-262
  • Current - Continuous Drain (Id) @ 25°C
    3.3A (Tc)

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