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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6646TR1
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1032509IRF6646TR1 ImageInternational Rectifier (Infineon Technologies)

IRF6646TR1

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Specifications
  • Part Number
    IRF6646TR1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 12A DIRECTFET
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.9V @ 150µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DIRECTFET™ MN
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    9.5 mOhm @ 12A, 10V
  • Power Dissipation (Max)
    2.8W (Ta), 89W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    DirectFET™ Isometric MN
  • Other Names
    IRF6646TR1CT
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2060pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta), 68A (Tc)
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Description: MOSFET N-CH 80V 12A DIRECTFET

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Description: MOSFET N-CH 100V DIRECTFET-MN

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