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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6662TR1PBF
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2478282IRF6662TR1PBF ImageInternational Rectifier (Infineon Technologies)

IRF6662TR1PBF

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Specifications
  • Part Number
    IRF6662TR1PBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 8.3A DIRECTFET
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRF6662TR1PBF.pdf
  • Vgs(th) (Max) @ Id
    4.9V @ 100µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DIRECTFET™ MZ
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    22 mOhm @ 8.2A, 10V
  • Power Dissipation (Max)
    2.8W (Ta), 89W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    DirectFET™ Isometric MZ
  • Other Names
    IRF6662TR1PBFTR
    SP001559718
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1360pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
  • Current - Continuous Drain (Id) @ 25°C
    8.3A (Ta), 47A (Tc)

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