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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2607FU6
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38506432SD2607FU6 ImageRohm Semiconductor

2SD2607FU6

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Specifications
  • Part Number
    2SD2607FU6
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 8A TO220FN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SD2607FU6.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    8A
  • Voltage - Breakdown
    TO-220FN
  • Vce Saturation (Max) @ Ib, Ic
    100V
  • Series
    -
  • RoHS Status
    Bulk
  • Resistor - Base (R1) (Ohms)
    40MHz
  • Power - Max
    2W
  • Polarization
    TO-220-3 Full Pack
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    2SD2607FU6
  • Frequency - Transition
    1000 @ 2A, 3V
  • Expanded Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 8A 40MHz 2W Through Hole TO-220FN
  • Description
    TRANS NPN DARL 100V 8A TO220FN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10µA (ICBO)
  • Current - Collector Cutoff (Max)
    1.5V @ 6mA, 3A
  • Current - Collector (Ic) (Max)
    NPN - Darlington

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