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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTA123JUBHZGTL
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4634334DTA123JUBHZGTL ImageLAPIS Semiconductor

DTA123JUBHZGTL

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Reference Price(In US Dollars)

In stock
1+
$0.23
10+
$0.208
25+
$0.189
100+
$0.136
250+
$0.08
500+
$0.067
1000+
$0.045
Inquiry Online
Specifications
  • Part Number
    DTA123JUBHZGTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    PNP DIGITAL TRANSISTOR (WITH BUI
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTA123JUBHZGTL.pdf
    2.DTA123JUBHZGTL.pdf
  • ECAD Model
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    UMT3F
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    200mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-85
  • Other Names
    DTA123JUBHZGTLCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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