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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTB113ECT116
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1476527DTB113ECT116 ImageLAPIS Semiconductor

DTB113ECT116

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Reference Price(In US Dollars)

In stock
3000+
$0.055
6000+
$0.048
15000+
$0.041
30000+
$0.038
75000+
$0.036
150000+
$0.032
Inquiry Online
Specifications
  • Part Number
    DTB113ECT116
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    PNP -500MA/-50V DIGITAL TRANSIST
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTB113ECT116.pdf
    2.DTB113ECT116.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SST3
  • Series
    -
  • Resistor - Emitter Base (R2)
    1 kOhms
  • Resistor - Base (R1)
    1 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DTB113ECMGT116
    DTB113ECT116TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    33 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA

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