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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC023JEBTL
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6236354DTC023JEBTL ImageLAPIS Semiconductor

DTC023JEBTL

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Reference Price(In US Dollars)

In stock
3000+
$0.029
6000+
$0.027
15000+
$0.023
30000+
$0.021
75000+
$0.018
150000+
$0.015
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Specifications
  • Part Number
    DTC023JEBTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 50V EMT3F
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTC023JEBTL.pdf
    2.DTC023JEBTL.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500µA, 5mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    EMT3F (SOT-416FL)
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    DTC023JEBTLTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3F (SOT-416FL)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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