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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC115TUAT106
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6971488DTC115TUAT106 ImageLAPIS Semiconductor

DTC115TUAT106

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Reference Price(In US Dollars)

In stock
3000+
$0.035
6000+
$0.031
15000+
$0.027
30000+
$0.025
75000+
$0.022
150000+
$0.018
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Specifications
  • Part Number
    DTC115TUAT106
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW UMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTC115TUAT106.pdf
    2.DTC115TUAT106.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 100µA, 1mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    UMT3
  • Series
    -
  • Resistor - Base (R1)
    100 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-70, SOT-323
  • Other Names
    DTC115TUAT106-ND
    DTC115TUAT106TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DTC115

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