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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC143ZUAT106
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1204682DTC143ZUAT106 ImageRohm Semiconductor

DTC143ZUAT106

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Reference Price(In US Dollars)

In stock
3000+
$0.035
6000+
$0.031
15000+
$0.027
30000+
$0.025
65535+
$0.018
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Specifications
  • Part Number
    DTC143ZUAT106
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW UMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DTC143ZUAT106.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100mA
  • Voltage - Breakdown
    UMT3
  • Vce Saturation (Max) @ Ib, Ic
    50V
  • Series
    -
  • RoHS Status
    Tape & Reel (TR)
  • Resistor - Emitter Base (R2) (Ohms)
    4.7k
  • Resistor - Base (R1) (Ohms)
    250MHz
  • Power - Max
    200mW
  • Polarization
    SC-70, SOT-323
  • Other Names
    DTC143ZUAT106-ND
    DTC143ZUAT106TR
  • Noise Figure (dB Typ @ f)
    47k
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Manufacturer Part Number
    DTC143ZUAT106
  • Frequency - Transition
    80 @ 10mA, 5V
  • Expanded Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3
  • Description
    TRANS PREBIAS NPN 200MW UMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    500nA
  • Current - Collector Cutoff (Max)
    300mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max)
    NPN - Pre-Biased

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