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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMH10FHAT2R
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1316040EMH10FHAT2R ImageLAPIS Semiconductor

EMH10FHAT2R

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Reference Price(In US Dollars)

In stock
8000+
$0.055
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Specifications
  • Part Number
    EMH10FHAT2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    NPN+NPN DIGITAL TRANSISTOR (CORR
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMH10FHAT2R.pdf
    2.EMH10FHAT2R.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    -
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    EMT6
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMH10FHAT2RTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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