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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMH21T110
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5191705IMH21T110 ImageLAPIS Semiconductor

IMH21T110

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Reference Price(In US Dollars)

In stock
3000+
$0.174
6000+
$0.163
15000+
$0.152
30000+
$0.15
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Specifications
  • Part Number
    IMH21T110
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS DUAL NPN SMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.IMH21T110.pdf
    2.IMH21T110.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 2.5mA, 50mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    SMT6
  • Series
    -
  • Resistor - Emitter Base (R2)
    -
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-74, SOT-457
  • Other Names
    IMH21T110-ND
    IMH21T110TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 20V 600mA 150MHz 300mW Surface Mount SMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    820 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    600mA
  • Base Part Number
    *MH21

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