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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > IMZ1AT108
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5178124IMZ1AT108 ImageLAPIS Semiconductor

IMZ1AT108

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Reference Price(In US Dollars)

In stock
3000+
$0.10
6000+
$0.095
15000+
$0.086
30000+
$0.081
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Specifications
  • Part Number
    IMZ1AT108
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V 0.15A 6SMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.IMZ1AT108.pdf
    2.IMZ1AT108.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SMT6
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-74, SOT-457
  • Other Names
    IMZ1AT108TR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    180MHz, 140MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 180MHz, 140MHz 300mW Surface Mount SMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA
  • Base Part Number
    *MZ1

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