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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > QSH29TR
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2715003QSH29TR ImageLAPIS Semiconductor

QSH29TR

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Reference Price(In US Dollars)

In stock
3000+
$0.334
Inquiry Online
Specifications
  • Part Number
    QSH29TR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 1.25W TSMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.QSH29TR.pdf
    2.QSH29TR.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    70V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 100mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    TSMT6 (SC-95)
  • Series
    -
  • Resistor - Emitter Base (R2)
    -
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    1.25W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 70V 500mA 1.25W Surface Mount TSMT6 (SC-95)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    500 @ 200mA, 5V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    QSH29

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