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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6004CNDTL
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2951017R6004CNDTL ImageLAPIS Semiconductor

R6004CNDTL

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Reference Price(In US Dollars)

In stock
1+
$2.38
10+
$2.149
100+
$1.727
500+
$1.343
1000+
$1.113
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Specifications
  • Part Number
    R6004CNDTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 4A CPT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    R6004CNDTL.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.5V @ 1mA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    CPT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.8 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    40W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    R6004CNDTLDKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    280pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 4A (Ta) 40W (Tc) Surface Mount CPT3
  • Current - Continuous Drain (Id) @ 25°C
    4A (Ta)

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