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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RF4E075ATTCR
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243018RF4E075ATTCR ImageLAPIS Semiconductor

RF4E075ATTCR

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Reference Price(In US Dollars)

In stock
1+
$0.80
10+
$0.677
100+
$0.508
500+
$0.372
1000+
$0.288
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Specifications
  • Part Number
    RF4E075ATTCR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 30V 7.5A 8DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RF4E075ATTCR.pdf
    2.RF4E075ATTCR.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    HUML2020L8
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    21.7 mOhm @ 7.5A, 10V
  • Power Dissipation (Max)
    2W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerUDFN
  • Other Names
    RF4E075ATTCRCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8
  • Current - Continuous Drain (Id) @ 25°C
    7.5A (Ta)

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