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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGT8BM65DTL
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6317190RGT8BM65DTL ImageLAPIS Semiconductor

RGT8BM65DTL

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Reference Price(In US Dollars)

In stock
2500+
$0.879
5000+
$0.868
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Specifications
  • Part Number
    RGT8BM65DTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 8A 62W TO-252
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RGT8BM65DTL.pdf
    2.RGT8BM65DTL.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Test Condition
    400V, 4A, 50 Ohm, 15V
  • Td (on/off) @ 25°C
    17ns/69ns
  • Switching Energy
    -
  • Supplier Device Package
    TO-252
  • Series
    -
  • Reverse Recovery Time (trr)
    40ns
  • Power - Max
    62W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    RGT8BM65DTLTR
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    13.5nC
  • Detailed Description
    IGBT Trench Field Stop 650V 8A 62W Surface Mount TO-252
  • Current - Collector Pulsed (Icm)
    12A
  • Current - Collector (Ic) (Max)
    8A

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