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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJP020N06T100
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203539RJP020N06T100 ImageLAPIS Semiconductor

RJP020N06T100

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Reference Price(In US Dollars)

In stock
1000+
$0.418
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Specifications
  • Part Number
    RJP020N06T100
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 2A SOT-89
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    MPT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    240 mOhm @ 2A, 4.5V
  • Power Dissipation (Max)
    500mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-243AA
  • Other Names
    RJP020N06T100TR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 4V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3
  • Current - Continuous Drain (Id) @ 25°C
    2A (Ta)
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