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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RSD200N10TL
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6507944RSD200N10TL ImageLAPIS Semiconductor

RSD200N10TL

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Specifications
  • Part Number
    RSD200N10TL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 20A CPT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RSD200N10TL.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    CPT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    52 mOhm @ 10A, 10V
  • Power Dissipation (Max)
    20W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    RSD200N10TLTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2200pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    48.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount CPT3
  • Current - Continuous Drain (Id) @ 25°C
    20A (Ta)

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