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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RYC002N05T316
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5443812RYC002N05T316 ImageLAPIS Semiconductor

RYC002N05T316

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Reference Price(In US Dollars)

In stock
1+
$0.58
10+
$0.416
100+
$0.245
500+
$0.139
1000+
$0.106
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Specifications
  • Part Number
    RYC002N05T316
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHANNEL 50V 200MA SST3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RYC002N05T316.pdf
    2.RYC002N05T316.pdf
  • Vgs(th) (Max) @ Id
    800mV @ 1mA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SST3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    2.2 Ohm @ 200mA, 4.5V
  • Power Dissipation (Max)
    350mW (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    RYC002N05T316CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    26pF @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V
  • Drain to Source Voltage (Vdss)
    50V
  • Detailed Description
    N-Channel 50V 200mA (Ta) 350mW (Tc) Surface Mount SST3
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)

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