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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RZF013P01TL
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3805605RZF013P01TL ImageLAPIS Semiconductor

RZF013P01TL

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Reference Price(In US Dollars)

In stock
1+
$0.50
10+
$0.349
100+
$0.229
500+
$0.136
1000+
$0.104
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Specifications
  • Part Number
    RZF013P01TL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 1.3A TUMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RZF013P01TL.pdf
    2.RZF013P01TL.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TUMT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    260 mOhm @ 1.3A, 4.5V
  • Power Dissipation (Max)
    800mW (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    3-SMD, Flat Leads
  • Other Names
    RZF013P01TLDKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    2.4nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3
  • Current - Continuous Drain (Id) @ 25°C
    1.3A (Ta)

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