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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RZM002P02T2L
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1962062RZM002P02T2L ImageLAPIS Semiconductor

RZM002P02T2L

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Reference Price(In US Dollars)

In stock
1+
$0.43
10+
$0.388
100+
$0.217
500+
$0.116
1000+
$0.079
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Specifications
  • Part Number
    RZM002P02T2L
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 0.2A VMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RZM002P02T2L.pdf
    2.RZM002P02T2L.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 100µA
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    VMT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.2 Ohm @ 200mA, 4.5V
  • Power Dissipation (Max)
    150mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-723
  • Other Names
    RZM002P02T2LCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    115pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.2V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)

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