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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N5582
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2N5582

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Reference Price(In US Dollars)

In stock
100+
$14.548
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Specifications
  • Part Number
    2N5582
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 50V 0.8A TO-46
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-46-3
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Bulk
  • Package / Case
    TO-206AB, TO-46-3 Metal Can
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    12 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-46-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    800mA
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Description: JFET N-CH 35V 0.31W TO92

Manufacturers: AMI Semiconductor / ON Semiconductor
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Description: TRANS NPN 160V 0.6A TO-92

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Description: JFET N-CH 30V 0.35W TO92

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Description: JFET N-CH 35V 0.31W TO92

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Description: TRANS NPN 160V 0.6A TO-92

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Description: JFET N-CH 35V 0.31W TO92

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