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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APL602B2G
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82499APL602B2G ImageMicrosemi

APL602B2G

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Reference Price(In US Dollars)

In stock
30+
$50.542
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Specifications
  • Part Number
    APL602B2G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 49A T-MAX
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APL602B2G.pdf
    2.APL602B2G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 2.5mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    T-MAX™ [B2]
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    125 mOhm @ 24.5A, 12V
  • Power Dissipation (Max)
    730W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3 Variant
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    23 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    9000pF @ 25V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    12V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 49A (Tc) 730W (Tc) Through Hole T-MAX™ [B2]
  • Current - Continuous Drain (Id) @ 25°C
    49A (Tc)

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