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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > APT65GP60L2DQ2G
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3607490APT65GP60L2DQ2G ImageMicrosemi

APT65GP60L2DQ2G

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Reference Price(In US Dollars)

In stock
25+
$18.899
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Specifications
  • Part Number
    APT65GP60L2DQ2G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 198A 833W TO264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    APT65GP60L2DQ2G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 65A
  • Test Condition
    400V, 65A, 5 Ohm, 15V
  • Td (on/off) @ 25°C
    30ns/90ns
  • Switching Energy
    605µJ (on), 895µJ (off)
  • Series
    POWER MOS 7®
  • Power - Max
    833W
  • Packaging
    Tube
  • Package / Case
    TO-264-3, TO-264AA
  • Other Names
    APT65GP60L2DQ2GMI
    APT65GP60L2DQ2GMI-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    PT
  • Gate Charge
    210nC
  • Detailed Description
    IGBT PT 600V 198A 833W Through Hole
  • Current - Collector Pulsed (Icm)
    250A
  • Current - Collector (Ic) (Max)
    198A

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