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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APT8M100B
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232406APT8M100B ImageMicrosemi

APT8M100B

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Reference Price(In US Dollars)

In stock
1+
$7.03
30+
$5.648
120+
$5.146
510+
$4.167
1020+
$3.514
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Specifications
  • Part Number
    APT8M100B
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 8A TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APT8M100B.pdf
    2.APT8M100B.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247 [B]
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.8 Ohm @ 4A, 10V
  • Power Dissipation (Max)
    290W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    APT8M100BMI
    APT8M100BMI-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    23 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1885pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 8A (Tc) 290W (Tc) Through Hole TO-247 [B]
  • Current - Continuous Drain (Id) @ 25°C
    8A (Tc)

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