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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N1486
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JAN2N1486

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Specifications
  • Part Number
    JAN2N1486
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 55V 3A
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N1486.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    55V
  • Vce Saturation (Max) @ Ib, Ic
    750mV @ 40mA, 750mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-8
  • Series
    Military, MIL-PRF-19500/207
  • Power - Max
    1.75W
  • Packaging
    Bulk
  • Package / Case
    TO-233AA, TO-8-3 Lens Top Metal Can
  • Other Names
    1086-16075
    1086-16075-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 55V 3A 1.75W Through Hole TO-8
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 750mA, 4V
  • Current - Collector Cutoff (Max)
    15µA (ICBO)
  • Current - Collector (Ic) (Max)
    3A

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