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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > JAN2N3811
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548112

JAN2N3811

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Specifications
  • Part Number
    JAN2N3811
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 60V 0.05A TO78
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N3811.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 100µA, 1mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    TO-78-6
  • Series
    Military, MIL-PRF-19500/336
  • Power - Max
    350mW
  • Packaging
    Bulk
  • Package / Case
    TO-78-6 Metal Can
  • Other Names
    1086-2359
    1086-2359-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    50mA

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