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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N5013
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JAN2N5013

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Specifications
  • Part Number
    JAN2N5013
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    NPN TRANSISTOR
  • Lead Free Status / RoHS Status
    RoHS non-compliant
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    800V
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-5
  • Series
    Military, MIL-PRF-19500/727
  • RoHS Status
    RoHS non-compliant
  • Power - Max
    1W
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 800V 200mA 1W Through Hole TO-5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 20mA, 10V
  • Current - Collector Cutoff (Max)
    10nA (ICBO)
  • Current - Collector (Ic) (Max)
    200mA

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