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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > JAN2N6770T1
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JAN2N6770T1

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Specifications
  • Part Number
    JAN2N6770T1
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH TO-254AA
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N6770T1.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-254AA
  • Series
    Military, MIL-PRF-19500/543
  • Rds On (Max) @ Id, Vgs
    500 mOhm @ 12A, 10V
  • Power Dissipation (Max)
    4W (Ta), 150W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-254-3, TO-254AA (Straight Leads)
  • Other Names
    JAN2N6770T1-MIL
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-254AA
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)

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