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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > JANS2N2920
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2804327JANS2N2920 ImageMicrosemi

JANS2N2920

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Reference Price(In US Dollars)

In stock
1+
$128.25
10+
$120.233
25+
$114.622
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Specifications
  • Part Number
    JANS2N2920
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 60V 0.03A TO-18
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JANS2N2920.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 100µA, 1mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    TO-18
  • Series
    Military, MIL-PRF-19500/355
  • Power - Max
    350mW
  • Packaging
    Bulk
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Other Names
    1086-15158
    1086-15158-MIL
  • Operating Temperature
    200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-18
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    30mA

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