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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1309ARA
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58372942SA1309ARA ImagePanasonic

2SA1309ARA

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Specifications
  • Part Number
    2SA1309ARA
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 50V 0.1A NS-B1
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Transistor Type
    PNP
  • Supplier Device Package
    NS-B1
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    NS-B1
  • Other Names
    2SA1309A-R(TA)
    2SA1309ARATB
    2SA1309ARTA
    2SA1309ARTB
    2SA1309ARTB-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    80MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 300mW Through Hole NS-B1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    210 @ 2mA, 10V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    2SA1309
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