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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DRA2523E0L
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4479059

DRA2523E0L

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Reference Price(In US Dollars)

In stock
3000+
$0.175
6000+
$0.164
15000+
$0.153
30000+
$0.151
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Specifications
  • Part Number
    DRA2523E0L
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 200MW MINI3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DRA2523E0L.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 100mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    Mini3-G3-B
  • Series
    -
  • Resistor - Emitter Base (R2)
    2.2 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DRA2523E0L-ND
    DRA2523E0LTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200mW Surface Mount Mini3-G3-B
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 100mA, 10V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    DRA2523

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