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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DRA9115G0L
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5762979DRA9115G0L ImagePanasonic

DRA9115G0L

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Reference Price(In US Dollars)

In stock
1+
$0.48
10+
$0.34
25+
$0.279
100+
$0.223
250+
$0.162
500+
$0.132
1000+
$0.101
Inquiry Online
Specifications
  • Part Number
    DRA9115G0L
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 125MW SSMINI3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DRA9115G0L.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500µA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SSMini3-F3-B
  • Series
    -
  • Resistor - Emitter Base (R2)
    100 kOhms
  • Power - Max
    125mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    DRA9115G0LCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 125mW Surface Mount SSMini3-F3-B
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DRA9115

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