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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > XP0B30100L
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461821XP0B30100L ImagePanasonic

XP0B30100L

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Specifications
  • Part Number
    XP0B30100L
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP DARL 50V SMINI5
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Transistor Type
    NPN, PNP Complementary Darlington
  • Supplier Device Package
    SMini5-G1
  • Series
    -
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Other Names
    XP0B30100LTR
    XP1B301-(TX)
    XP1B301-TX
    XP1B301TR
    XP1B301TR-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    150MHz, 80MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP Complementary Darlington 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMini5-G1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 2mA, 10V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    100mA
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