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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM080N03EPQ56 RLG
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722969TSM080N03EPQ56 RLG ImageTSC (Taiwan Semiconductor)

TSM080N03EPQ56 RLG

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Reference Price(In US Dollars)

In stock
1+
$0.74
10+
$0.625
100+
$0.469
500+
$0.344
1000+
$0.266
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Specifications
  • Part Number
    TSM080N03EPQ56 RLG
  • Manufacturer/Brand
    Taiwan Semiconductor
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 55A 8PDFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TSM080N03EPQ56 RLG.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-PDFN (5x6)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    8 mOhm @ 16A, 10V
  • Power Dissipation (Max)
    54W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerTDFN
  • Other Names
    TSM080N03EPQ56 RLGCT
    TSM080N03EPQ56 RLGCT-ND
    TSM080N03EPQ56RLGCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Manufacturer Standard Lead Time
    30 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    750pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 55A (Tc) 54W (Tc) Surface Mount 8-PDFN (5x6)
  • Current - Continuous Drain (Id) @ 25°C
    55A (Tc)

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