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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM80N1R2CL C0G
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TSM80N1R2CL C0G

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Reference Price(In US Dollars)

In stock
1+
$2.47
10+
$2.227
100+
$1.789
500+
$1.392
1000+
$1.153
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Specifications
  • Part Number
    TSM80N1R2CL C0G
  • Manufacturer/Brand
    Taiwan Semiconductor
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 5.5A TO262S
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TSM80N1R2CL C0G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-262S (I2PAK)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.2 Ohm @ 1.8A, 10V
  • Power Dissipation (Max)
    110W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Short Leads, I²Pak
  • Other Names
    TSM80N1R2CL C0G-ND
    TSM80N1R2CLC0G
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    685pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    19.4nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-262S (I2PAK)
  • Current - Continuous Drain (Id) @ 25°C
    5.5A (Tc)

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